Posted by dapj20 on May 16, 2015 in Power-Supply-Regulators, Transistor
HELLO THERE ...COULD anybody pls help me with a place to get more information on the following components...cant seem to find it anywhere.
W20NB50 W8NB100 found them in a liteon power supply pack for a database supply. i just don't know what they stand for. ...saw on a web page that it is produced by ST micro electronics. i went there but no show ..can somebody pls help?
post by FP
W20NB50 ST Power MOSFET Transistors TO-247 N-Ch 500 Volt 20 Amp
W8NB100 ST Power MOSFET Transistors TO-247 N-Ch 1000 Volt 8 Amp
You will find equivalents here - NTE Electronics - N-Channel MOSFET Selector
ST’s MOSFETs with a breakdown voltage > 650 V offer low gate charge and low on-resistance down to 0.275 Ω (850 V) in PowerFLAT 8x8 HV packages.
Junction design of a Mosfet

"The source-to-body and drain-to-body junctions are the object of much attention because of three major factors: their design affects the current-voltage (I-V) characteristics of the device, lowering output resistance, and also the speed of the device through the loading effect of the junction capacitances, and finally, the component of stand-by power dissipation due to junction leakage."
Updated - July 2013
delabs
W20NB50 W8NB100 found them in a liteon power supply pack for a database supply. i just don't know what they stand for. ...saw on a web page that it is produced by ST micro electronics. i went there but no show ..can somebody pls help?
post by FP
W20NB50 ST Power MOSFET Transistors TO-247 N-Ch 500 Volt 20 Amp
W8NB100 ST Power MOSFET Transistors TO-247 N-Ch 1000 Volt 8 Amp
You will find equivalents here - NTE Electronics - N-Channel MOSFET Selector
ST’s MOSFETs with a breakdown voltage > 650 V offer low gate charge and low on-resistance down to 0.275 Ω (850 V) in PowerFLAT 8x8 HV packages.
Junction design of a Mosfet

"The source-to-body and drain-to-body junctions are the object of much attention because of three major factors: their design affects the current-voltage (I-V) characteristics of the device, lowering output resistance, and also the speed of the device through the loading effect of the junction capacitances, and finally, the component of stand-by power dissipation due to junction leakage."
Updated - July 2013
delabs